Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C 22A
Rds On (Max) @ Id, Vgs 420 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Gate Charge (Qg) @ Vgs 186nC @ 10V
Input Capacitance (Ciss) @ Vds 5200pF @ 25V
Power - Max 390W
Mounting Type Chassis Mount
Package / Case SP3