| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GB01SLT06-214 | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 650V | 1A (DC) | 2V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 6.5V | 76pF @ 1V, 1MHz | 3.55°C/W Jc | -55°C ~ 175°C | - | - | |
| 1N8031-GA | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 650V | 1A | 1.5V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 76pF @ 1V, 1MHz | 3.55°C/W Jc | -55°C ~ 250°C | Through Hole | TO-276AA | |
| 1N8030-GA | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 650V | 750mA | 1.39V @ 750mA | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 76pF @ 1V, 1MHz | 9.52°C/W Jc | -55°C ~ 250°C | Through Hole | TO-257-3 |
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