| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDH10G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 340µA @ 650V | 300pF @ 1V, 1MHz | 1.7°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDW10G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 650V | 300pF @ 1V, 1MHz | 2.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-247-3 | |
| SIDC19D60SIC3 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 300pF @ 1V, 1MHz | - | -55°C ~ 175°C | Surface Mount | Wafer | |
| APT10SCD65K | MICROSEMI POWER PRODUCTS GROUP | Silicon Carbide Schottky | 650V | 17A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | |
| APT10SCD65KCT | MICROSEMI POWER PRODUCTS GROUP | Silicon Carbide Schottky | 650V | 17A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 |
© 2016 Copyright
