260pF @ 1V, 1MHz,Capacitance @ Vr, F
3 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
GB05SLT12-252 GENESIC SEMICONDUCTOR INC
Silicon Carbide Schottky 1200V (1.2kV) 5A 2V @ 5A No Recovery Time > 500mA (Io) 0ns 20µA @ 1200V 260pF @ 1V, 1MHz - - Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
GB05SLT12-220 GENESIC SEMICONDUCTOR INC
Silicon Carbide Schottky 1200V (1.2kV) 5A 2V @ 5A No Recovery Time > 500mA (Io) 0ns 20µA @ 1200V 260pF @ 1V, 1MHz - - Through Hole TO-220-2
SCS106AGC ROHM CO LTD
Silicon Carbide Schottky 600V 6A 1.5V @ 6A No Recovery Time > 500mA (Io) 0ns 120µA @ 600V 260pF @ 1V, 1MHz 2.3°C/W Jc 175°C (Max) Through Hole TO-220-2