| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N6098 | GENESIC SEMICONDUCTOR INC | Schottky | 40V | 50A | 700mV @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 30V | - | 1°C/W Jc | -65°C ~ 150°C | Chassis, Stud Mount | DO-203AB, DO-5, Stud | |
| 1N6097R | GENESIC SEMICONDUCTOR INC | Schottky, Reverse Polarity | 30V | 50A | 700mV @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 30V | - | 1°C/W Jc | -65°C ~ 150°C | Chassis, Stud Mount | DO-203AB, DO-5, Stud | |
| PMEG3030EP,115 | NXP SEMICONDUCTORS | Schottky | 30V | 3A | 360mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 30V | 470pF @ 1V, 1MHz | 12°C/W Jl | 150°C (Max) | Surface Mount | SOD-128 | |
| CMS01(TE12L,Q,M) | TOSHIBA CORP | Schottky | 30V | 3A | 370mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 30V | - | 16°C/W Jl | -40°C ~ 125°C | Surface Mount | SOD-128 | |
| 1N6097 | GENESIC SEMICONDUCTOR INC | Schottky | 30V | 50A | 700mV @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 30V | - | 1°C/W Jc | -65°C ~ 150°C | Chassis, Stud Mount | DO-203AB, DO-5, Stud | |
| 1N6098R | GENESIC SEMICONDUCTOR INC | Schottky, Reverse Polarity | 40V | 50A | 700mV @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 30V | - | 1°C/W Jc | -65°C ~ 150°C | Chassis, Stud Mount | DO-203AB, DO-5, Stud | |
| CMS01(TE12R,Q) | TOSHIBA CORP | Schottky | 30V | 3A | 370mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 30V | - | 16°C/W Jl | -40°C ~ 125°C | Surface Mount | SOD-128 | |
| CMS01(TE12L) | TOSHIBA CORP | Schottky | 30V | 3A | 370mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 30V | - | 16°C/W Jl | -40°C ~ 125°C | Surface Mount | SOD-128 |
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