| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GB02SLT12-214 | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 1200V (1.2kV) | 2A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 131pF @ 1V, 1MHz | 2.3°C/W Jc | -55°C ~ 175°C | - | - | |
| DHG30I1200HA | IXYS CORP | Standard | 1200V (1.2kV) | 30A | 2.26V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 50µA @ 1200V | - | 0.7°C/W Jc | -55°C ~ 150°C | Through Hole | TO-3P-3 Full Pack | |
| C4D02120E | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 6.9A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 167pF @ 0V, 1MHz | 2.9°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| C4D02120A | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 5.9A | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 167pF @ 0V, 1MHz | 3.7°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| GB20SLT12-247 | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 1200V (1.2kV) | 20A | 2V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 968pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | |
| DSI30-12AC | IXYS CORP | Standard | 1200V (1.2kV) | 30A | 1.45V @ 45A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | 0.6°C/W Cs | -55°C ~ 150°C | Through Hole, Radial | - | |
| VS-8EWS12STRPBF | VISHAY SEMICONDUCTORS | Standard | 1200V (1.2kV) | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | 2.5°C/W Jc | -55°C ~ 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| VS-10ETS12SPBF | VISHAY SEMICONDUCTORS | Standard | 1200V (1.2kV) | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | 2.5°C/W Jc | -40°C ~ 150°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| VS-10ETS12PBF | VISHAY SEMICONDUCTORS | Standard | 1200V (1.2kV) | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | 0.5°C/W Cs | -40°C ~ 150°C | Through Hole | TO-220-2 | |
| VS-10ETS12FPPBF | VISHAY SEMICONDUCTORS | Standard | 1200V (1.2kV) | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | 0.5°C/W Cs | -40°C ~ 150°C | Through Hole | TO-220-2 Full Pack |
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