Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SCS215AGC | ROHM CO LTD | Silicon Carbide Schottky | 650V | 15A | 1.55V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 0ns | 300µA @ 600V | 550pF @ 1V, 1MHz | 1.3°C/W Jc | 175°C (Max) | - | - | |
SCS215AEC | ROHM CO LTD | Silicon Carbide Schottky | 650V | 15A | 1.55V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 0ns | 300µA @ 600V | 550pF @ 1V, 1MHz | 1.3°C/W Jc | 175°C (Max) | - | - | |
SCS230AE2C | ROHM CO LTD | Silicon Carbide Schottky | 650V | 30A | 1.55V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 600V | 550pF @ 1V, 1MHz | 0.63°C/W Jc | 175°C (Max) | - | - | |
SCS215AJTLL | ROHM CO LTD | Silicon Carbide Schottky | 650V | 15A | 1.55V @ 15A | No Recovery Time > 500mA (Io) | - | 300µA @ 600V | 550pF @ 1V, 1MHz | 1.3°C/W Jc | 175°C (Max) | - | - | |
STPSC1006D | STMICROELECTRONICS | Silicon Carbide Schottky | 600V | 10A | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 600V | 650pF @ 0V 1MHz | 2°C/W Jc | -40°C ~ 175°C | Through Hole | TO-220-2 | |
SDT08S60 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 600V | 280pF @ 0V, 1MHz | 2.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 |