| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GB50SLT12-247 | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 1200V (1.2kV) | 50A | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 1mA @ 1200V | 2940pF @ 1V, 1MHz | 0.242°C/W Jc | -55°C ~ 175°C | Through Hole | TO-247-2 | |
| 20ETS12FP | VISHAY SEMICONDUCTORS | Standard | 1200V (1.2kV) | 20A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 1mA @ 1200V | - | 0.5°C/W Cs | -40°C ~ 150°C | Through Hole | TO-220-2 Full Pack Fused Center, ITO-220AC |
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