160µA @ 600V, Reverse Leakage Current @ Vr
5 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
IDH12S60C INFINEON TECHNOLOGIES AG
Silicon Carbide Schottky 600V 12A (DC) 1.7V @ 12A No Recovery Time > 500mA (Io) 0ns 160µA @ 600V 530pF @ 1V, 1MHz 1.3°C/W Jc -55°C ~ 175°C Through Hole TO-220-2
SCS208AGC ROHM CO LTD
Silicon Carbide Schottky 650V 8A (DC) 1.55V @ 8A No Recovery Time > 500mA (Io) 0ns 160µA @ 600V 291pF @ 1V, 1MHz 2.2°C/W Jc 175°C (Max) Through Hole TO-220-2
SCS208AMC ROHM CO LTD
Silicon Carbide Schottky 650V 8A 1.55V @ 8A Fast Recovery =< 500ns, > 200mA (Io) - 160µA @ 600V 291pF @ 1V, 1MHz 4.4°C/W Jc 175°C (Max) - -
SCS208AJTLL ROHM CO LTD
Silicon Carbide Schottky 650V 8A (DC) 1.55V @ 8A No Recovery Time > 500mA (Io) 0ns 160µA @ 600V 291pF @ 1V, 1MHz 2.4°C/W Jc 175°C (Max) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SCS108AGC ROHM CO LTD
Silicon Carbide Schottky 600V 8A 1.7V @ 8A No Recovery Time > 500mA (Io) 0ns 160µA @ 600V 345pF @ 1V, 1MHz 2°C/W Jc 175°C (Max) Through Hole TO-220-2