| Diode Type | Silicon Carbide Schottky |
| Reverse DC Voltage(Vr) | 650V |
| Current - Average Rectified (Io) | 8A |
| Forward Voltage (Vf) | 1.55V @ 8A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Reverse Leakage Current @ Vr | 160µA @ 600V |
| Capacitance @ Vr, F | 291pF @ 1V, 1MHz |
| Thermal Resistance | 4.4°C/W Jc |
| Operating Temperature - Junction | 175°C (Max) |
| Mounting Type | - |
| Package / Case | - |
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