| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GB05SLT12-252 | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 1200V (1.2kV) | 5A | 2V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1200V | 260pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| STTH5R06DJF-TR | STMICROELECTRONICS | Standard | 600V | 5A | 2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 60µA @ 600V | - | 2°C/W Jc | 175°C (Max) | Surface Mount | 8-PowerVDFN | |
| GB05SLT12-220 | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 1200V (1.2kV) | 5A | 2V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1200V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | |
| DGS9-030AS | IXYS CORP | Schottky | 300V | 11A | 2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.3mA @ 300V | - | 0.5°C/W Cs | -55°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| DGS10-030A | IXYS CORP | Schottky | 300V | 11A | 2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.3mA @ 300V | - | 0.5°C/W Cs | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| BYC5D-500,127 | NXP SEMICONDUCTORS | Standard | 500V | 5A | 2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | 40µA @ 500V | - | 2.5°C/W Jl | 150°C (Max) | Through Hole | TO-220-2 | |
| BYC5DX-500,127 | NXP SEMICONDUCTORS | Standard | 500V | 5A | 2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | 40µA @ 500V | - | 7.2°C/W Jh | 150°C (Max) | Through Hole | TO-220-2 Full Pack, Isolated Tab |
© 2016 Copyright
