GB01SLT12-220 |
GENESIC SEMICONDUCTOR INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
1A
|
2V @ 1A
|
No Recovery Time > 500mA (Io)
|
0ns
|
2µA @ 1200V
|
69pF @ 1V, 1MHz
|
-
|
-
|
Through Hole
|
TO-220-2
|
RF 1BV1 |
SANKEN ELECTRIC CO LTD |
|
Standard
|
800V
|
600mA
|
2V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
400ns
|
10µA @ 800V
|
-
|
-
|
-
|
Through Hole
|
Axial
|
RF 1B |
SANKEN ELECTRIC CO LTD |
|
Standard
|
800V
|
600mA
|
2V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
400ns
|
10µA @ 800V
|
-
|
15°C/W Jl
|
-40°C ~ 150°C
|
Through Hole
|
Axial
|
RF 1BV |
SANKEN ELECTRIC CO LTD |
|
Standard
|
800V
|
600mA
|
2V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
400ns
|
10µA @ 800V
|
-
|
15°C/W Jl
|
-40°C ~ 150°C
|
Through Hole
|
Axial
|
RG 10A |
SANKEN ELECTRIC CO LTD |
|
Standard
|
600V
|
1A
|
2V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
100ns
|
500µA @ 600V
|
-
|
15°C/W Jc
|
-40°C ~ 150°C
|
Through Hole
|
Axial
|
RG 2A |
SANKEN ELECTRIC CO LTD |
|
Standard
|
600V
|
1A
|
2V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
100ns
|
500µA @ 600V
|
-
|
12°C/W Jc
|
-40°C ~ 150°C
|
Through Hole
|
Axial
|
RG 10AV |
SANKEN ELECTRIC CO LTD |
|
Standard
|
600V
|
1A
|
2V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
100ns
|
500µA @ 600V
|
-
|
15°C/W Jc
|
-40°C ~ 150°C
|
Through Hole
|
Axial
|
RG 10AV1 |
SANKEN ELECTRIC CO LTD |
|
Standard
|
600V
|
1A
|
2V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
100ns
|
500µA @ 600V
|
-
|
15°C/W Jc
|
-40°C ~ 150°C
|
Through Hole
|
Axial
|
RG 2AV |
SANKEN ELECTRIC CO LTD |
|
Standard
|
600V
|
1A
|
2V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
100ns
|
500µA @ 600V
|
-
|
12°C/W Jc
|
-40°C ~ 150°C
|
Through Hole
|
Axial
|
RG 2AV1 |
SANKEN ELECTRIC CO LTD |
|
Standard
|
600V
|
1A
|
2V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
100ns
|
500µA @ 600V
|
-
|
12°C/W Jc
|
-40°C ~ 150°C
|
Through Hole
|
Axial
|