| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GB50SLT12-247 | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 1200V (1.2kV) | 50A | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 1mA @ 1200V | 2940pF @ 1V, 1MHz | 0.242°C/W Jc | -55°C ~ 175°C | Through Hole | TO-247-2 | |
| SIDC32D170H | INFINEON TECHNOLOGIES AG | Standard | 1700V (1.7kV) | 50A (DC) | 1.8V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | - | -55°C ~ 150°C | Surface Mount | Wafer |
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