Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
DSEI12-06A | IXYS CORP | Standard | 600V | 14A | 1.7V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 600V | - | 0.5°C/W Cs | -40°C ~ 150°C | Through Hole | TO-220-2 | |
IDH16S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 650pF @ 1V, 1MHz | 1.1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
IDH16G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 550µA @ 650V | 470pF @ 1V, 1MHz | 1.2°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 |