Specification
Diode Type Silicon Carbide Schottky
Reverse DC Voltage(Vr) 650V
Current - Average Rectified (Io) 16A (DC)
Forward Voltage (Vf) 1.7V @ 16A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Reverse Leakage Current @ Vr 550µA @ 650V
Capacitance @ Vr, F 470pF @ 1V, 1MHz
Thermal Resistance 1.2°C/W Jc
Operating Temperature - Junction -55°C ~ 175°C
Mounting Type Through Hole
Package / Case TO-220-2