| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FFPF10F150STU | FAIRCHILD SEMICONDUCTOR CORP | Standard | 1500V (1.5kV) | 10A | 1.6V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 170ns | 10µA @ 1500V | - | 3°C/W Jc | -65°C ~ 150°C | Through Hole | TO-220-2 Full Pack | |
| SCS210KGC | ROHM CO LTD | Silicon Carbide Schottky | 1200V (1.2kV) | 10A (DC) | 1.6V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 550pF @ 1V, 1MHz | 0.99°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 | |
| 1N8028-GA | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 1200V (1.2kV) | 9.4A (DC) | 1.6V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1200V | 884pF @ 1V, 1MHz | 1.08°C/W Jc | -55°C ~ 250°C | Through Hole | TO-257-3 | |
| SIDC08D120H6 | INFINEON TECHNOLOGIES AG | Standard | 1200V (1.2kV) | 10A (DC) | 1.6V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | -55°C ~ 150°C | Surface Mount | Wafer | |
| RD1006LS-SB5 | ON SEMICONDUCTOR | Standard | - | 10A | 1.6V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100µA @ 600V | - | 3.22°C/W Jc | 150°C (Max) | Surface Mount | TO-220-2 Full Pack |
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