8A (DC),Current - Average Rectified (Io)
8A (DC),Current - Average Rectified (Io)
19 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
SD2114S040S8R0 AVX CORP
Schottky 40V 8A (DC) 550mV @ 8A Fast Recovery =< 500ns, > 200mA (Io) - 500µA @ 40V - 17°C/W Jl -55°C ~ 125°C Surface Mount DO-214AA, SMB
IDH08S60C INFINEON TECHNOLOGIES AG
Silicon Carbide Schottky 600V 8A (DC) 1.7V @ 8A No Recovery Time > 500mA (Io) 0ns 100µA @ 600V 310pF @ 1V, 1MHz 2°C/W Jc -55°C ~ 175°C Through Hole TO-220-2
CDBD8060-G COMCHIP TECHNOLOGY CORP
Schottky 60V 8A (DC) 750mV @ 8A Fast Recovery =< 500ns, > 200mA (Io) - 5mA @ 60V - 4°C/W Jc -50°C ~ 150°C Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
CDBD8100-G COMCHIP TECHNOLOGY CORP
Schottky 100V 8A (DC) 850mV @ 8A Fast Recovery =< 500ns, > 200mA (Io) - 5mA @ 100V - 4°C/W Jc -50°C ~ 150°C Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
C3D08065I CREE INC
Silicon Carbide Schottky 650V 8A (DC) 1.8V @ 8A No Recovery Time > 500mA (Io) 0ns 60µA @ 650V 441pF @ 0V, 1MHz 3.1°C/W Jc -55°C ~ 175°C Through Hole TO-220-2 Isolated Tab
IDH08SG60C INFINEON TECHNOLOGIES AG
Silicon Carbide Schottky 600V 8A (DC) 2.1V @ 8A No Recovery Time > 500mA (Io) 0ns 70µA @ 600V 240pF @ 1V, 1MHz 1.5°C/W Jc -55°C ~ 175°C Through Hole TO-220-2
IDH08G65C5 INFINEON TECHNOLOGIES AG
Silicon Carbide Schottky 650V 8A (DC) 1.7V @ 8A No Recovery Time > 500mA (Io) 0ns 280µA @ 650V 250pF @ 1V, 1MHz 2°C/W Jc -55°C ~ 175°C Through Hole TO-220-2
IDD08SG60C INFINEON TECHNOLOGIES AG
Silicon Carbide Schottky 600V 8A (DC) 2.1V @ 8A No Recovery Time > 500mA (Io) 0ns 70µA @ 600V 240pF @ 1V, 1MHz 1.5°C/W Jc -55°C ~ 175°C Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SDT08S60 INFINEON TECHNOLOGIES AG
Silicon Carbide Schottky 600V 8A (DC) 1.7V @ 8A No Recovery Time > 500mA (Io) 0ns 300µA @ 600V 280pF @ 0V, 1MHz 2.3°C/W Jc -55°C ~ 175°C Through Hole TO-220-2
SCS208AJTLL ROHM CO LTD
Silicon Carbide Schottky 650V 8A (DC) 1.55V @ 8A No Recovery Time > 500mA (Io) 0ns 160µA @ 600V 291pF @ 1V, 1MHz 2.4°C/W Jc 175°C (Max) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB