Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IDH08S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | 2°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
SCS208AGC | ROHM CO LTD | Silicon Carbide Schottky | 650V | 8A (DC) | 1.55V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 600V | 291pF @ 1V, 1MHz | 2.2°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 | |
TRS8E65C,S1Q | TOSHIBA CORP | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 90µA @ 650V | 44pF @ 650V, 1MHz | 2.35°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 | |
IDH08SG60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 8A (DC) | 2.1V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 600V | 240pF @ 1V, 1MHz | 1.5°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
IDH08G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 280µA @ 650V | 250pF @ 1V, 1MHz | 2°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
SDT08S60 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 600V | 280pF @ 0V, 1MHz | 2.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 |