GB05SLT12-252 |
GENESIC SEMICONDUCTOR INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
5A
|
2V @ 5A
|
No Recovery Time > 500mA (Io)
|
0ns
|
20µA @ 1200V
|
260pF @ 1V, 1MHz
|
-
|
-
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
1N5825 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Schottky
|
40V
|
5A
|
380mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
10mA @ 40V
|
-
|
-
|
-
|
Through Hole, Axial
|
Axial
|
DB2441700L |
PANASONIC CORP |
|
Schottky
|
40V
|
5A
|
540mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
30ns
|
300µA @ 40V
|
95pF @ 10V, 1MHz
|
-
|
125°C (Max)
|
Surface Mount
|
SOD-128
|
FYPF0545STU |
FAIRCHILD SEMICONDUCTOR CORP |
|
Schottky
|
45V
|
5A
|
550mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
1mA @ 45V
|
-
|
-
|
-
|
Through Hole
|
TO-220-3 Full Pack
|
FYP0545STU |
FAIRCHILD SEMICONDUCTOR CORP |
|
Schottky
|
40V
|
5A
|
-
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
-
|
-
|
-
|
-
|
Through Hole
|
TO-220-3 Full Pack
|
GB05SLT12-220 |
GENESIC SEMICONDUCTOR INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
5A
|
2V @ 5A
|
No Recovery Time > 500mA (Io)
|
0ns
|
20µA @ 1200V
|
260pF @ 1V, 1MHz
|
-
|
-
|
Through Hole
|
TO-220-2
|
UPS5100HE3 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Schottky
|
100V
|
5A
|
810mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
200µA @ 100V
|
150pF @ 4V, 1MHz
|
-
|
-
|
-
|
-
|
PMEG4050ETP,115 |
NXP SEMICONDUCTORS |
|
Schottky
|
40V
|
5A
|
490mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
300µA @ 40V
|
600pF @ 1V, 1MHz
|
-
|
-
|
Surface Mount
|
SOD-128
|
RJU60C2SDPD-E0#J2 |
RENESAS ELECTRONICS CORP |
|
Standard
|
600V
|
5A
|
2V @ 15A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
70ns
|
1µA @ 600V
|
-
|
-
|
150°C (Max)
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
RJU60C2TDPP-EJ#T2 |
RENESAS ELECTRONICS CORP |
|
Standard
|
600V
|
5A
|
2V @ 15A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
70ns
|
1µA @ 600V
|
-
|
-
|
150°C (Max)
|
Through Hole
|
TO-220-2 Full Pack
|