2A,Current - Average Rectified (Io)
-55°C ~ 175°C,Operating Temperature - Junction
83 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
DFLS2100-7 DIODES INC
Schottky 100V 2A 860mV @ 2A Fast Recovery =< 500ns, > 200mA (Io) - 1µA @ 100V 36pF @ 5V, 1MHz 7°C/W Jl -55°C ~ 175°C Surface Mount 2-SMD, Flat Lead
GB02SLT12-220 GENESIC SEMICONDUCTOR INC
Silicon Carbide Schottky 1200V (1.2kV) 2A 2V @ 2A No Recovery Time > 500mA (Io) 0ns 4µA @ 1200V 138pF @ 1V, 1MHz 2.32°C/W Jc -55°C ~ 175°C Through Hole TO-220-2
C3D02060F CREE INC
Silicon Carbide Schottky 600V 2A 1.7V @ 2A No Recovery Time > 500mA (Io) 0ns 50µA @ 600V 120pF @ 0V, 1MHz 13.8°C/W Jc -55°C ~ 175°C Through Hole TO-220-2 Full Pack, Isolated Tab
C3D02060A CREE INC
Silicon Carbide Schottky 600V 2A 1.7V @ 2A No Recovery Time > 500mA (Io) 0ns 50µA @ 600V 120pF @ 0V, 1MHz 3.8°C/W Jc -55°C ~ 175°C Through Hole TO-220-2
C3D02060E CREE INC
Silicon Carbide Schottky 600V 2A 1.7V @ 2A No Recovery Time > 500mA (Io) 0ns 50µA @ 600V 120pF @ 0V, 1MHz 3.8°C/W Jc -55°C ~ 175°C Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
GB02SLT12-252 GENESIC SEMICONDUCTOR INC
Silicon Carbide Schottky 1200V (1.2kV) 2A 2V @ 2A No Recovery Time > 500mA (Io) 0ns 4µA @ 1200V 138pF @ 1V, 1MHz 2.3°C/W Jc -55°C ~ 175°C Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
DSS2-100AB IXYS CORP
Schottky 100V 2A 740mV @ 2A Fast Recovery =< 500ns, > 200mA (Io) - 500µA @ 100V - 15°C/W Jl -55°C ~ 175°C Surface Mount DO-214AA, SMB
DSA2I100SB IXYS CORP
Schottky 100V 2A 790mV @ 2A Fast Recovery =< 500ns, > 200mA (Io) - 10µA @ 100V - 25°C/W Jl -55°C ~ 175°C Surface Mount DO-214AA, SMB
ESH2PD-M3/84A VISHAY SEMICONDUCTORS
Standard 200V 2A 980mV @ 2A Fast Recovery =< 500ns, > 200mA (Io) 25ns 1µA @ 200V 25pF @ 4V, 1MHz 15°C/W Jl -55°C ~ 175°C Surface Mount DO-220AA
1N5059TR VISHAY SEMICONDUCTORS
Avalanche 200V 2A 1.15V @ 2.5A Standard Recovery >500ns, > 200mA (Io) 4µs 1µA @ 200V 40pF @ 0V, 1MHz 45°C/W Ja -55°C ~ 175°C Through Hole SOD-57, Axial