| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SCS210AJTLL | ROHM CO LTD | Silicon Carbide Schottky | 650V | 10A (DC) | 1.55V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 365pF @ 1V, 1MHz | 1.8°C/W Jc | 175°C (Max) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| SCS210AGC | ROHM CO LTD | Silicon Carbide Schottky | 650V | 10A (DC) | 1.55V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 365pF @ 1V, 1MHz | 1.9°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 | |
| TRS10E65C,S1Q | TOSHIBA CORP | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 650V | - | - | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| C3D10065I | CREE INC | Silicon Carbide Schottky | 650V | 10A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 480pF @ 0V, 1MHz | 2.6°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 Isolated Tab | |
| IDH10G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 340µA @ 650V | 300pF @ 1V, 1MHz | 1.7°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDW10G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 650V | 300pF @ 1V, 1MHz | 2.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-247-3 | |
| SCS210AMC | ROHM CO LTD | Silicon Carbide Schottky | 650V | 10A (DC) | 1.55V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 365pF @ 1V, 1MHz | 4.3°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 |
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