| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| C3D10065I | CREE INC | Silicon Carbide Schottky | 650V | 10A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 480pF @ 0V, 1MHz | 2.6°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 Isolated Tab | |
| IDH10SG60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 10A (DC) | 2.1V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 600V | 290pF @ 1V, 1MHz | 1.25°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDH10G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 340µA @ 650V | 300pF @ 1V, 1MHz | 1.7°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDW10G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 650V | 300pF @ 1V, 1MHz | 2.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-247-3 | |
| IDH10S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 600V | 480pF @ 1V, 1MHz | 1.5°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| SDT10S30 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 300V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 300V | 600pF @ 0V, 1MHz | 2.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| SDP10S30 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 300V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 300V | 600pF @ 0V, 1MHz | 2.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-3 | |
| SDT10S60 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 350µA @ 600V | 350pF @ 0V, 1MHz | 2°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDH10S120 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 1200V (1.2kV) | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 1200V | 500pF @ 1V, 1MHz | 1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| BY359-1500,127 | NXP SEMICONDUCTORS | Standard | 1500V (1.5kV) | 10A (DC) | 1.8V @ 20A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 100µA @ 1300V | - | 2°C/W Jl | 150°C (Max) | Through Hole | TO-220-2 |
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