1N3767 |
GENESIC SEMICONDUCTOR INC |
|
Standard
|
900V
|
35A
|
1.2V @ 35A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
10µA @ 50V
|
-
|
0.25°C/W Jc
|
-65°C ~ 190°C
|
Chassis, Stud Mount
|
DO-203AB, DO-5, Stud
|
1N3767R |
GENESIC SEMICONDUCTOR INC |
|
Standard, Reverse Polarity
|
900V
|
35A
|
1.2V @ 35A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
10µA @ 50V
|
-
|
0.25°C/W Jc
|
-65°C ~ 190°C
|
Chassis, Stud Mount
|
DO-203AB, DO-5, Stud
|
1N6630US |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Standard
|
900V
|
-
|
-
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
4µA @ 100V
|
-
|
6.5°C/W Jc
|
-65°C ~ 150°C
|
Surface Mount
|
E-MELF
|
JANTXV1N6624US |
MICROSEMI CORP |
|
Standard
|
900V
|
1A
|
1.55V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
60ns
|
500nA @ 150V
|
10pF @ 10V, 1MHz
|
38°C/W Jl
|
-65°C ~ 150°C
|
-
|
-
|
MUR490E |
ON SEMICONDUCTOR |
|
Standard
|
900V
|
4A
|
1.85V @ 4A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
100ns
|
25µA @ 900V
|
-
|
53°C/W Ja
|
-65°C ~ 175°C
|
Through Hole
|
DO-201AA, DO-27, Axial
|
1N3272 |
POWEREX INC |
|
Standard
|
900V
|
160A
|
-
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
12mA @ 900V
|
-
|
0.15°C/W Cs
|
-65°C ~ 175°C
|
Chassis, Stud Mount
|
DO-205AB, DO-9, Stud
|
1N3272R |
POWEREX INC |
|
Standard
|
900V
|
160A
|
-
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
12mA @ 900V
|
-
|
0.15°C/W Cs
|
-65°C ~ 175°C
|
Chassis, Stud Mount
|
DO-205AB, DO-9, Stud
|
1N4055 |
POWEREX INC |
|
Standard
|
900V
|
275A
|
-
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
12mA @ 900V
|
-
|
0.15°C/W Cs
|
-65°C ~ 190°C
|
Chassis, Stud Mount
|
DO-205AB, DO-9, Stud
|
1N4055R |
POWEREX INC |
|
Standard
|
900V
|
275A
|
-
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
12mA @ 900V
|
-
|
0.15°C/W Cs
|
-65°C ~ 190°C
|
Chassis, Stud Mount
|
DO-205AB, DO-9, Stud
|
CMF03(TE12L,Q) |
TOSHIBA CORP |
|
Standard
|
900V
|
500mA
|
2.5V @ 500mA
|
Fast Recovery =< 500ns, > 200mA (Io)
|
100ns
|
50µA @ 900V
|
-
|
16°C/W Jl
|
-40°C ~ 125°C
|
Surface Mount
|
SOD-128
|