| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PDU420-13 | DIODES INC | Standard | 200V | 4A | 890mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | - | 3°C/W Jl | -65°C ~ 175°C | Surface Mount | - | |
| PDS4200H-13 | DIODES INC | Schottky | 200V | 4A | 840mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | - | 3°C/W Jl | -65°C ~ 175°C | Surface Mount | - | |
| SBR10U200P5-13 | DIODES INC | Super Barrier | 200V | 10A | 880mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | 77°C/W Ja | -65°C ~ 175°C | Surface Mount | - | |
| PDU620-13 | DIODES INC | Standard | 200V | 6A | 940mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | - | 1.5°C/W Jl | -65°C ~ 175°C | Surface Mount | - | |
| PDS3200-13 | DIODES INC | Schottky | 200V | 3A | 780mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 200V | - | 2°C/W Jl | -65°C ~ 150°C | Surface Mount | - | |
| 1N5614US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | 13°C/W Jl | -65°C ~ 200°C | Surface Mount | - | |
| 1N5550 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 200V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | - | 22°C/W Jl | -65°C ~ 175°C | - | - | |
| 1N5615US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | 13°C/W Jl | -65°C ~ 175°C | - | - | |
| 1N5417 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | 22°C/W Jl | -65°C ~ 175°C | Through Hole | - | |
| 1N5550US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 200V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | - | 6.5°C/W Jl | -65°C ~ 175°C | - | - |
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