| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N5615US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | 13°C/W Jl | -65°C ~ 175°C | - | - | |
| 1N5417 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | 22°C/W Jl | -65°C ~ 175°C | Through Hole | - | |
| 1N5417US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | 6.5°C/W Jl | -65°C ~ 175°C | Surface Mount | - | |
| JANTX1N4942 | MICROSEMI CORP | Standard | 200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | 38°C/W Jl | -65°C ~ 175°C | - | - | |
| JANTX1N5417US | MICROSEMI CORP | Standard | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | 22°C/W Jl | -65°C ~ 175°C | - | - | |
| JANTXV1N5417US | MICROSEMI CORP | Standard | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | 6.5°C/W Jl | -65°C ~ 175°C | - | - | |
| RMPG06DHE3_A/54 | VISHAY SEMICONDUCTORS | Standard | 200V | 1A | 1.3V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 6.6pF @ 4V, 1MHz | 67°C/W Ja | -55°C ~ 150°C | - | - | |
| RMPG06DHE3_A/73 | VISHAY SEMICONDUCTORS | Standard | 200V | 1A | 1.3V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 6.6pF @ 4V, 1MHz | 67°C/W Ja | -55°C ~ 150°C | - | - |
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