150V, Reverse DC Voltage(Vr)
875mV @ 1A, Forward Voltage (Vf)
17 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
1N5806US MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 150V 1A 875mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 25ns 1µA @ 150V 25pF @ 10V, 1MHz 13°C/W Jl -65°C ~ 175°C - -
MURA115T3G ON SEMICONDUCTOR
Standard 150V 2A 875mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 35ns 2µA @ 150V - 24°C/W Jl -65°C ~ 175°C Surface Mount DO-214AC, SMA
MUR115RLG ON SEMICONDUCTOR
Standard 150V 1A 875mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 35ns 2µA @ 150V - 72°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial
1N5806TR MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 150V 2.5A 875mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 25ns 1µA @ 150V - 36°C/W Jl -65°C ~ 175°C Through Hole A, Axial
JANTX1N5806 MICROSEMI CORP
Standard 150V 1A 875mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 25ns 1µA @ 150V 25pF @ 10V, 1MHz 36°C/W Jl -65°C ~ 175°C Through Hole A, Axial
JANS1N5806 MICROSEMI CORP
Standard 150V 1A 875mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 25ns 1µA @ 150V 25pF @ 10V, 1MHz 36°C/W Jl -65°C ~ 175°C Through Hole A, Axial
JANS1N5806US MICROSEMI CORP
Standard 150V 1A 875mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 25ns 1µA @ 150V 25pF @ 10V, 1MHz 13°C/W Jl -65°C ~ 175°C - -
JANTX1N5806US MICROSEMI CORP
Standard 150V 1A 875mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 25ns 1µA @ 150V 25pF @ 10V, 1MHz 13°C/W Jl -65°C ~ 175°C - -
JANTXV1N5806 MICROSEMI CORP
Standard 150V 1A 875mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 25ns 1µA @ 150V 25pF @ 10V, 1MHz 36°C/W Jl -65°C ~ 175°C Through Hole A, Axial
JANTXV1N5806US MICROSEMI CORP
Standard 150V 1A 875mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 25ns 1µA @ 150V 25pF @ 10V, 1MHz 13°C/W Jl -65°C ~ 175°C - -