MUR115RLG |
ON SEMICONDUCTOR |
|
Standard
|
150V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
2µA @ 150V
|
-
|
72°C/W Ja
|
-65°C ~ 175°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
MUR115G |
ON SEMICONDUCTOR |
|
Standard
|
150V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
2µA @ 150V
|
-
|
72°C/W Ja
|
-65°C ~ 175°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
MUR115 |
ON SEMICONDUCTOR |
|
Standard
|
150V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
2µA @ 150V
|
-
|
72°C/W Ja
|
-65°C ~ 175°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
1N5806TR |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Standard
|
150V
|
2.5A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
1µA @ 150V
|
-
|
36°C/W Jl
|
-65°C ~ 175°C
|
Through Hole
|
A, Axial
|
JANTX1N5806 |
MICROSEMI CORP |
|
Standard
|
150V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
1µA @ 150V
|
25pF @ 10V, 1MHz
|
36°C/W Jl
|
-65°C ~ 175°C
|
Through Hole
|
A, Axial
|
JANS1N5806 |
MICROSEMI CORP |
|
Standard
|
150V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
1µA @ 150V
|
25pF @ 10V, 1MHz
|
36°C/W Jl
|
-65°C ~ 175°C
|
Through Hole
|
A, Axial
|
JANTXV1N5806 |
MICROSEMI CORP |
|
Standard
|
150V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
1µA @ 150V
|
25pF @ 10V, 1MHz
|
36°C/W Jl
|
-65°C ~ 175°C
|
Through Hole
|
A, Axial
|
MUR115RL |
ON SEMICONDUCTOR |
|
Standard
|
150V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
2µA @ 150V
|
-
|
72°C/W Ja
|
-65°C ~ 175°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|