| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N3673AR | GENESIC SEMICONDUCTOR INC | Standard, Reverse Polarity | 1000V (1kV) | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | 2°C/W Jc | -65°C ~ 200°C | Chassis, Stud Mount | DO-203AA, DO-4, Stud | |
| 1N3673A | GENESIC SEMICONDUCTOR INC | Standard | 1000V (1kV) | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | 2°C/W Jc | -65°C ~ 200°C | Chassis, Stud Mount | DO-203AA, DO-4, Stud | |
| S150M | GENESIC SEMICONDUCTOR INC | Standard | 1000V (1kV) | 150A | 1.2V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | 0.35°C/W Jc | -65°C ~ 200°C | Chassis, Stud Mount | DO-205AA, DO-8, Stud | |
| 1N5622 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 1000V (1kV) | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | - | 38°C/W Jl | -65°C ~ 200°C | Through Hole | A, Axial | |
| S150MR | GENESIC SEMICONDUCTOR INC | Standard, Reverse Polarity | 1000V (1kV) | 150A | 1.2V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | 0.35°C/W Jc | -65°C ~ 200°C | Chassis, Stud Mount | DO-205AA, DO-8, Stud | |
| 1N5622US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 1000V (1kV) | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | - | 13°C/W Jl | -65°C ~ 200°C | - | - | |
| JAN1N5622 | MICROSEMI CORP | Standard | 1000V (1kV) | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | - | 38°C/W Jl | -65°C ~ 200°C | Through Hole | A, Axial | |
| JANTX1N5622 | MICROSEMI CORP | Standard | 1000V (1kV) | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | - | 38°C/W Jl | -65°C ~ 200°C | Through Hole | A, Axial | |
| JAN1N5622US | MICROSEMI CORP | Standard | 1000V (1kV) | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | - | 38°C/W Jl | -65°C ~ 200°C | - | - | |
| JANTXV1N5622 | MICROSEMI CORP | Standard | 1000V (1kV) | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | - | 38°C/W Jl | -65°C ~ 200°C | Through Hole | A, Axial |
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