1N8031-GA |
GENESIC SEMICONDUCTOR INC |
|
Silicon Carbide Schottky
|
650V
|
1A
|
1.5V @ 1A
|
No Recovery Time > 500mA (Io)
|
0ns
|
5µA @ 650V
|
76pF @ 1V, 1MHz
|
3.55°C/W Jc
|
-55°C ~ 250°C
|
Through Hole
|
TO-276AA
|
1N8035-GA |
GENESIC SEMICONDUCTOR INC |
|
Silicon Carbide Schottky
|
650V
|
14.6A (DC)
|
1.5V @ 15A
|
No Recovery Time > 500mA (Io)
|
0ns
|
5µA @ 650V
|
1107pF @ 1V, 1MHz
|
0.49°C/W Jc
|
-55°C ~ 250°C
|
Surface Mount
|
TO-276AA
|
1N8033-GA |
GENESIC SEMICONDUCTOR INC |
|
Silicon Carbide Schottky
|
650V
|
4.3A (DC)
|
1.65V @ 5A
|
No Recovery Time > 500mA (Io)
|
0ns
|
5µA @ 650V
|
274pF @ 1V, 1MHz
|
1.38°C/W Jc
|
-55°C ~ 250°C
|
Surface Mount
|
TO-276AA
|