| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FFH60UP40S3 | FAIRCHILD SEMICONDUCTOR CORP | Standard | 400V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 100µA @ 400V | - | 0.2°C/W Jc | -65°C ~ 150°C | Through Hole, Radial | TO-247-3 | |
| FFH60UP60S3 | FAIRCHILD SEMICONDUCTOR CORP | Standard | 600V | 60A | 1.7V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 100µA @ 600V | - | 0.7°C/W Jc | -65°C ~ 150°C | Through Hole, Radial | TO-247-3 | |
| IDW30E65D1FKSA1 | INFINEON TECHNOLOGIES AG | Standard | 650V | 60A | 1.7V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 40µA @ 650V | - | 1.06°C/W Jc | -40°C ~ 175°C | Through Hole | TO-247-3 | |
| IDW40E65D1FKSA1 | INFINEON TECHNOLOGIES AG | Standard | 650V | 80A | 1.7V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 129ns | 40µA @ 650V | - | 0.84°C/W Jc | -40°C ~ 175°C | Through Hole | TO-247-3 | |
| IDW16G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 600µA @ 650V | 470pF @ 1V, 1MHz | 1.6°C/W Jc | -55°C ~ 175°C | Through Hole | TO-247-3 | |
| IDW10G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 650V | 300pF @ 1V, 1MHz | 2.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-247-3 | |
| IDW12G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 500µA @ 650V | 360pF @ 1V, 1MHz | 2°C/W Jc | -55°C ~ 175°C | Through Hole | TO-247-3 | |
| IDW30G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 30A (DC) | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 1.1mA @ 650V | 860pF @ 1V, 1MHz | 1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-247-3 | |
| IDW20G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 700µA @ 650V | 590pF @ 1V, 1MHz | 1.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-247-3 | |
| IDW75E60 | INFINEON TECHNOLOGIES AG | Standard | 600V | 120A (DC) | 2V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 121ns | 40µA @ 600V | - | 0.5°C/W Jc | -55°C ~ 175°C | Through Hole | TO-247-3 |
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