SI8475EDB-T1-E1

SI8475EDB-T1-E1
Attribute
Description
Manufacturer Part Number
SI8475EDB-T1-E1
Manufacturer
Description
MOSFET P-CH 20V 4MICROFOOT
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Field Effect Transistor Type P-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 20 V
Continuous Drain Current at 25C 4.9A (Ta)
Gate Drive Voltage Range 2.5V, 4.5V
Max On-State Resistance 32mOhm @ 1A, 4.5V
Max Threshold Gate Voltage 1.5V @ 250µA
Max Gate Charge at Vgs -
Maximum Gate Voltage ±12V
Max Input Cap at Vds -
Transistor Special Function -
Max Heat Dissipation 1.1W (Ta), 2.7W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type 4-Microfoot
Component Housing Style 4-XFBGA, CSPBGA

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 4.9A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20 V. Accommodates drive voltage specified at 2.5V, 4.5V for RdsOn regulation. Accommodates FET classification identified as P-Channel. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 4-XFBGA, CSPBGA providing mechanical and thermal shielding. Enclosure type 4-Microfoot ensuring device integrity. Highest power dissipation 1.1W (Ta), 2.7W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id and Vgs 32mOhm @ 1A, 4.5V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type 4-Microfoot for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±12V for MOSFET parameters. Peak Vgs(th) at Id 1.5V @ 250µA for MOSFET threshold level.

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