STP4NK80Z

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 3A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 800 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 22.5 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 22.5 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 575 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 575 pF @ 25 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Enclosure type TO-220 ensuring device integrity. Highest power dissipation 80W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 22.5 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 3.5Ohm @ 1.5A, 10V for MOSFET criteria. Product or component classification series SuperMESH™. Manufacturer package type TO-220 for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±30V for MOSFET parameters. Peak Vgs(th) at Id 4.5V @ 50µA for MOSFET threshold level.