Stock: 493
Distributor: 120
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 197 | ₹ 204.34 | ₹ 40,254.98 |
| 97 | ₹ 215.96 | ₹ 20,948.12 |
| 46 | ₹ 232.60 | ₹ 10,699.60 |
| 15 | ₹ 249.20 | ₹ 3,738.00 |
| 6 | ₹ 323.96 | ₹ 1,943.76 |
| 1 | ₹ 498.40 | ₹ 498.40 |
Stock: 394
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 144 | ₹ 289.25 | ₹ 41,652.00 |
| 54 | ₹ 311.50 | ₹ 16,821.00 |
| 1 | ₹ 667.50 | ₹ 667.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | STripFET™ II | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 80 V | |
| Continuous Drain Current at 25C | 80A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 11mOhm @ 40A, 10V | |
| Max Threshold Gate Voltage | 4V @ 250µA | |
| Max Gate Charge at Vgs | 160 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 3700 pF @ 25 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 300W (Tc) | |
| Ambient Temp Range | -55°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | D2PAK | |
| Component Housing Style | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 80A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 80 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 160 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 160 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 3700 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 3700 pF @ 25 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB providing mechanical and thermal shielding. Enclosure type D2PAK ensuring device integrity. Highest power dissipation 300W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 160 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 11mOhm @ 40A, 10V for MOSFET criteria. Product or component classification series STripFET™ II. Manufacturer package type D2PAK for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 4V @ 250µA for MOSFET threshold level.
