ITR8010
Data Sheet
Attribute
Description
Manufacturer Part Number
ITR8010
Manufacturer
Description
SENSOR OPT SLOT PHOTOTRANS MODUL
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Obsolete | |
| Proximity Detection Range | 0.083" (2.1mm) | |
| Detection Technology Type | Through-Beam | |
| Output Setup Options | Phototransistor | |
| Max Forward DC Current | 50 mA | |
| Maximum Collector Amps | 20 mA | |
| Max Collector-Emitter Breakdown | 30 V | |
| Activation Speed ms | 15µs | |
| Ambient Temp Range | -25°C ~ 85°C | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | Slotted Module |
Description
Provides a maximum collector current (Ic) of 20 mA. Provides a maximum DC forward current (If) rated at 50 mA. Mounting style Through Hole for structural integrity. Operating temperature -25°C ~ 85°C for thermal stability. Output configuration Phototransistor for system configuration. Enclosure Bulk for component protection or transport. Enclosure/case Slotted Module providing mechanical and thermal shielding. Product condition Obsolete for availability and lifecycle. Response duration 15µs for quick operation or detection. Detection distance 0.083" (2.1mm) for sensors or detectors. Detection method Through-Beam for device functionality. Highest collector-emitter breakdown voltage 30 V.
