W25Q80BWZPIG

W25Q80BWZPIG
Attribute
Description
Manufacturer Part Number
W25Q80BWZPIG
Description
IC FLASH 8MBIT SPI/QUAD 8WSON
Note : GST will not be applied to orders shipping outside of India

Stock:
237400

Distributor: 145

Lead Time: Not specified

Quantity Unit Price Ext. Price
1325 ₹ 23.34 ₹ 30,925.50
990 ₹ 26.01 ₹ 25,749.90
770 ₹ 26.83 ₹ 20,659.10
560 ₹ 27.76 ₹ 15,545.60
360 ₹ 28.68 ₹ 10,324.80
150 ₹ 34.95 ₹ 5,242.50

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line SpiFlash®
IC Encapsulation Type Tube
Availability Status Obsolete
RAM Technology Category Non-Volatile
Storage Media Type FLASH
Core Technology Platform FLASH - NOR
Total Memory Bytes 8Mbit
Storage Layout Structure 1M x 8
Data Access Bus SPI - Quad I/O
Timing Pulse Rate 80 MHz
Memory Write Speed Word/Page 800µs
Data Retrieval Speed -
Power Supply Voltage 1.65V ~ 1.95V
Ambient Temp Range -40°C ~ 85°C (TA)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-WDFN Exposed Pad
Vendor Package Type 8-WSON (6x5)

Description

Functions at a clock frequency of 80 MHz. Storage format FLASH for data interoperability. Memory bus SPI - Quad I/O for connectivity and performance. Memory arrangement 1M x 8 for optimal data retrieval. Memory total 8Mbit for device storage capability. Memory classification Non-Volatile for efficiency and compatibility. Mounting style Surface Mount for structural integrity. Operating temperature -40°C ~ 85°C (TA) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case 8-WDFN Exposed Pad providing mechanical and thermal shielding. Enclosure type 8-WSON (6x5) ensuring device integrity. Product condition Obsolete for availability and lifecycle. Product or component classification series SpiFlash®. Manufacturer package type 8-WSON (6x5) for component choice. Voltage supply 1.65V ~ 1.95V for electrical needs. Platform technology FLASH - NOR for the type of product. Operating supply voltage 1.65V ~ 1.95V for the device. Time taken to write per word or page 800µs for memory units.

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