HYB18T1G800BF-3S

HYB18T1G800BF-3S
Attribute
Description
Manufacturer Part Number
HYB18T1G800BF-3S
Manufacturer
Description
IC DRAM 1GBIT PARALLEL 68TFBGA
Note : GST will not be applied to orders shipping outside of India

Stock:
78

Distributor: 118

Lead Time: Not specified

Quantity Unit Price Ext. Price
60 ₹ 2,878.60 ₹ 1,72,716.00
29 ₹ 3,003.75 ₹ 87,108.75
1 ₹ 3,254.06 ₹ 3,254.06

Stock:
87

Distributor: 117

Lead Time: Not specified


Quantity Unit Price Ext. Price
50 ₹ 4,342.95 ₹ 2,17,147.50
25 ₹ 4,454.56 ₹ 1,11,364.00
10 ₹ 4,604.15 ₹ 46,041.50
1 ₹ 4,984.89 ₹ 4,984.89

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Cut Tape (CT)
RAM Technology Category Volatile
Storage Media Type DRAM
Core Technology Platform SDRAM - DDR2
Total Memory Bytes 1Gbit
Storage Layout Structure 128M x 8
Data Access Bus Parallel
Timing Pulse Rate 333 MHz
Memory Write Speed Word/Page -
Data Retrieval Speed -
Power Supply Voltage 1.7V ~ 1.9V
Ambient Temp Range 0°C ~ 95°C (TC)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 68-TFBGA
Vendor Package Type -

Description

Functions at a clock frequency of 333 MHz. Storage format DRAM for data interoperability. Memory bus Parallel for connectivity and performance. Memory arrangement 128M x 8 for optimal data retrieval. Memory total 1Gbit for device storage capability. Memory classification Volatile for efficiency and compatibility. Mounting style Surface Mount for structural integrity. Operating temperature 0°C ~ 95°C (TC) for thermal stability. Enclosure Cut Tape (CT) for component protection or transport. Enclosure/case 68-TFBGA providing mechanical and thermal shielding. Voltage supply 1.7V ~ 1.9V for electrical needs. Platform technology SDRAM - DDR2 for the type of product. Operating supply voltage 1.7V ~ 1.9V for the device.

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