MT46V16M8TG-6T IT:D TR

MT46V16M8TG-6T IT:D TR
Attribute
Description
Manufacturer Part Number
MT46V16M8TG-6T IT:D TR
Manufacturer
Description
IC DRAM 128MBIT PAR 66TSOP
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Stock:
216

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
100 ₹ 616.00 ₹ 61,600.00
50 ₹ 646.60 ₹ 32,330.00
25 ₹ 678.71 ₹ 16,967.75
10 ₹ 723.66 ₹ 7,236.60
1 ₹ 849.95 ₹ 849.95

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)
Availability Status Obsolete
RAM Technology Category Volatile
Storage Media Type DRAM
Core Technology Platform SDRAM - DDR
Total Memory Bytes 128Mbit
Storage Layout Structure 16M x 8
Data Access Bus Parallel
Timing Pulse Rate 167 MHz
Memory Write Speed Word/Page 15ns
Data Retrieval Speed 700 ps
Power Supply Voltage 2.3V ~ 2.7V
Ambient Temp Range -40°C ~ 85°C (TA)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 66-TSSOP (0.400", 10.16mm Width)
Vendor Package Type 66-TSOP

Description

Reaches access speeds recorded at 700 ps for efficient data retrieval. Functions at a clock frequency of 167 MHz. Storage format DRAM for data interoperability. Memory bus Parallel for connectivity and performance. Memory arrangement 16M x 8 for optimal data retrieval. Memory total 128Mbit for device storage capability. Memory classification Volatile for efficiency and compatibility. Mounting style Surface Mount for structural integrity. Operating temperature -40°C ~ 85°C (TA) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT) for component protection or transport. Enclosure/case 66-TSSOP (0.400", 10.16mm Width) providing mechanical and thermal shielding. Enclosure type 66-TSOP ensuring device integrity. Product condition Obsolete for availability and lifecycle. Manufacturer package type 66-TSOP for component choice. Voltage supply 2.3V ~ 2.7V for electrical needs. Platform technology SDRAM - DDR for the type of product. Operating supply voltage 2.3V ~ 2.7V for the device. Time taken to write per word or page 15ns for memory units.

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