AS4C8M32MSA-6BIN

AS4C8M32MSA-6BIN
Attribute
Description
Manufacturer Part Number
AS4C8M32MSA-6BIN
Description
IC DRAM 256MBIT PARALLEL 90FBGA
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Stock:
65

Distributor: 120

Lead Time: Not specified

Quantity Unit Price Ext. Price
49 ₹ 431.92 ₹ 21,164.08
24 ₹ 465.20 ₹ 11,164.80
8 ₹ 498.40 ₹ 3,987.20
4 ₹ 647.92 ₹ 2,591.68
1 ₹ 996.80 ₹ 996.80

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tray
Availability Status Obsolete
RAM Technology Category Volatile
Storage Media Type DRAM
Core Technology Platform SDRAM - Mobile
Total Memory Bytes 256Mbit
Storage Layout Structure 8M x 32
Data Access Bus Parallel
Timing Pulse Rate 166 MHz
Memory Write Speed Word/Page 15ns
Data Retrieval Speed 5.5 ns
Power Supply Voltage 1.14V ~ 1.95V
Ambient Temp Range -40°C ~ 85°C (TA)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 90-VFBGA
Vendor Package Type 90-FBGA (8x13)

Description

Reaches access speeds recorded at 5.5 ns for efficient data retrieval. Functions at a clock frequency of 166 MHz. Storage format DRAM for data interoperability. Memory bus Parallel for connectivity and performance. Memory arrangement 8M x 32 for optimal data retrieval. Memory total 256Mbit for device storage capability. Memory classification Volatile for efficiency and compatibility. Mounting style Surface Mount for structural integrity. Operating temperature -40°C ~ 85°C (TA) for thermal stability. Enclosure Tray for component protection or transport. Enclosure/case 90-VFBGA providing mechanical and thermal shielding. Enclosure type 90-FBGA (8x13) ensuring device integrity. Product condition Obsolete for availability and lifecycle. Manufacturer package type 90-FBGA (8x13) for component choice. Voltage supply 1.14V ~ 1.95V for electrical needs. Platform technology SDRAM - Mobile for the type of product. Operating supply voltage 1.14V ~ 1.95V for the device. Time taken to write per word or page 15ns for memory units.

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