STGWT40H65DFB

STGWT40H65DFB
Attribute
Description
Manufacturer Part Number
STGWT40H65DFB
Manufacturer
Description
No description available
Note : GST will not be applied to orders shipping outside of India

Stock:
1

Distributor: 142

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 390.71 ₹ 390.71
10 ₹ 217.16 ₹ 2,171.60
100 ₹ 150.41 ₹ 15,041.00

Stock:
60

Distributor: 121

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 409.36 ₹ 409.36
10 ₹ 371.97 ₹ 3,719.70
100 ₹ 334.58 ₹ 33,458.00
500 ₹ 297.18 ₹ 1,48,590.00
1000 ₹ 259.77 ₹ 2,59,770.00

Product Attributes

Type Description
Category
IGBT Class Trench and Field Stop
Max Collector-Emitter Breakdown 650V
Maximum Collector Amps 80A
Maximum Power Handling 283W
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
Entry Signal Category Standard
Attachment Mounting Style Through Hole
Component Housing Style TO-3P-3, SC-65-3

Description

Provides a maximum collector current (Ic) of 80A. Features a DC current gain hFE at Ic evaluated at 2V @ 15V, 40A. Designed as Trench and Field Stop IGBT type for effective power switching. Set up with Standard input type for versatile applications. Mounting style Through Hole for structural integrity. Enclosure/case TO-3P-3, SC-65-3 providing mechanical and thermal shielding. Peak power 283W for device protection. Peak Vce(on) at Vge 2V @ 15V, 40A for transistor parameters. Highest collector-emitter breakdown voltage 650V.

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