Attribute
Description
Manufacturer Part Number
STGW35NB60SD
Manufacturer
Description
STGW35NB Series 600 V 35 A N-Channel Low Drop PowerMESH? IGB...
Note :
GST will not be applied to orders shipping outside of India
Stock: 472
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 558.92 | ₹ 558.92 |
| 10 | ₹ 428.09 | ₹ 4,280.90 |
| 100 | ₹ 363.12 | ₹ 36,312.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | - | |
| Max Collector-Emitter Breakdown | 600V | |
| Maximum Collector Amps | 70A | |
| Maximum Power Handling | 200W | |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 20A | |
| Entry Signal Category | Standard | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-247-3 |
Description
Provides a maximum collector current (Ic) of 70A. Features a DC current gain hFE at Ic evaluated at 1.7V @ 15V, 20A. Set up with Standard input type for versatile applications. Mounting style Through Hole for structural integrity. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Peak power 200W for device protection. Peak Vce(on) at Vge 1.7V @ 15V, 20A for transistor parameters. Highest collector-emitter breakdown voltage 600V.
