APTGT75SK120D1G
Data Sheet
Attribute
Description
Manufacturer Part Number
APTGT75SK120D1G
Manufacturer
Description
IGBTs - Arrays,
Modules,
1200V,
110A,
357W
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | Trench and Field Stop | |
| Max Collector-Emitter Breakdown | 1200V | |
| Maximum Collector Amps | 110A | |
| Maximum Power Handling | 357W | |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A | |
| Entry Signal Category | 5345nF @ 25V | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | D1 |
Description
Provides a maximum collector current (Ic) of 110A. Features a DC current gain hFE at Ic evaluated at 2.1V @ 15V, 75A. Designed as Trench and Field Stop IGBT type for effective power switching. Set up with 5345nF @ 25V input type for versatile applications. Mounting style Chassis Mount for structural integrity. Enclosure/case D1 providing mechanical and thermal shielding. Peak power 357W for device protection. Peak Vce(on) at Vge 2.1V @ 15V, 75A for transistor parameters. Highest collector-emitter breakdown voltage 1200V.