MUBW75-12T8
Data Sheet
Attribute
Description
Manufacturer Part Number
MUBW75-12T8
Manufacturer
Description
MODULE IGBT CBI E3
Manufacturer Lead Time
38 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | Trench | |
| Max Collector-Emitter Breakdown | 1200V | |
| Maximum Collector Amps | 110A | |
| Maximum Power Handling | 355W | |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 75A | |
| Entry Signal Category | 5.35nF @ 25V | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | E3 |
Description
Provides a maximum collector current (Ic) of 110A. Features a DC current gain hFE at Ic evaluated at 2.15V @ 15V, 75A. Designed as Trench IGBT type for effective power switching. Set up with 5.35nF @ 25V input type for versatile applications. Mounting style Chassis Mount for structural integrity. Enclosure/case E3 providing mechanical and thermal shielding. Peak power 355W for device protection. Peak Vce(on) at Vge 2.15V @ 15V, 75A for transistor parameters. Highest collector-emitter breakdown voltage 1200V.