MITA10WB1200TMH
Data Sheet
Attribute
Description
Manufacturer Part Number
MITA10WB1200TMH
Manufacturer
Description
MODULE IGBT CBI
Manufacturer Lead Time
38 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | Trench | |
| Max Collector-Emitter Breakdown | 1200V | |
| Maximum Collector Amps | 17A | |
| Maximum Power Handling | 70W | |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 10A | |
| Entry Signal Category | 0.6nF @ 25V | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | MiniPack2 |
Description
Provides a maximum collector current (Ic) of 17A. Features a DC current gain hFE at Ic evaluated at 2.2V @ 15V, 10A. Designed as Trench IGBT type for effective power switching. Set up with 0.6nF @ 25V input type for versatile applications. Mounting style Chassis Mount for structural integrity. Enclosure/case MiniPack2 providing mechanical and thermal shielding. Peak power 70W for device protection. Peak Vce(on) at Vge 2.2V @ 15V, 10A for transistor parameters. Highest collector-emitter breakdown voltage 1200V.