IRG4PF50WDPBF
Data Sheet
Attribute
Description
Manufacturer Part Number
IRG4PF50WDPBF
Manufacturer
Description
Transistor: IGBT; 900V; 51A; 200W; TO247AC
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | - | |
| Max Collector-Emitter Breakdown | 900V | |
| Maximum Collector Amps | 51A | |
| Maximum Power Handling | 200W | |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 28A | |
| Entry Signal Category | Standard | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-247-3 |
Description
Provides a maximum collector current (Ic) of 51A. Features a DC current gain hFE at Ic evaluated at 2.7V @ 15V, 28A. Set up with Standard input type for versatile applications. Mounting style Through Hole for structural integrity. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Peak power 200W for device protection. Peak Vce(on) at Vge 2.7V @ 15V, 28A for transistor parameters. Highest collector-emitter breakdown voltage 900V.
