Attribute
Description
Manufacturer Part Number
IKW25N120T2
Manufacturer
Description
Transistor: IGBT; 1.2kV; 50A; 349W; TO247
Manufacturer Lead Time
16 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | Trench | |
| Max Collector-Emitter Breakdown | 1200V | |
| Maximum Collector Amps | 50A | |
| Maximum Power Handling | 349W | |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 25A | |
| Entry Signal Category | Standard | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-247-3 |
Description
Provides a maximum collector current (Ic) of 50A. Features a DC current gain hFE at Ic evaluated at 2.2V @ 15V, 25A. Designed as Trench IGBT type for effective power switching. Set up with Standard input type for versatile applications. Mounting style Through Hole for structural integrity. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Peak power 349W for device protection. Peak Vce(on) at Vge 2.2V @ 15V, 25A for transistor parameters. Highest collector-emitter breakdown voltage 1200V.
