Description

Structured by channel type categorized as Independent. Supports high-level output current indicated as 0.8V, 2.9V. Allows peak sourcing and sinking currents of 350mA, 650mA. Employs driven configuration described as Half-Bridge. Includes IGBT, MOSFET (N-Channel) gate type ideal for effective transistor management. Allows for a maximum high-side voltage of 200 V in bootstrap circuits. Set up with Non-Inverting input type for versatile applications. Logic voltage thresholds VIL/VIH 0.8V, 2.9V for digital input/output adherence. Mounting style Surface Mount for structural integrity. Total drivers 2 for controlling circuits or systems. Operating temperature -40°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Enclosure type 8-SOIC ensuring device integrity. Product condition Active for availability and lifecycle. Standard rise/fall time 60ns, 30ns for signal changes. Manufacturer package type 8-SOIC for component choice. Voltage supply 10V ~ 20V for electrical needs. Operating supply voltage 10V ~ 20V for the device.