Description

Structured by channel type categorized as Synchronous. Supports high-level output current indicated as 1.1V, 1.7V. Allows peak sourcing and sinking currents of 2.5A, 2.5A. Employs driven configuration described as Half-Bridge. Includes IGBT, MOSFET (N-Channel) gate type ideal for effective transistor management. Allows for a maximum high-side voltage of 650 V in bootstrap circuits. Set up with Non-Inverting input type for versatile applications. Logic voltage thresholds VIL/VIH 1.1V, 1.7V for digital input/output adherence. Mounting style Surface Mount for structural integrity. Total drivers 1 for controlling circuits or systems. Operating temperature -40°C ~ 125°C (TA) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Enclosure type PG-DSO-8-53 ensuring device integrity. Product condition Active for availability and lifecycle. Standard rise/fall time 15ns, 15ns for signal changes. Manufacturer package type PG-DSO-8-53 for component choice. Voltage supply 10V ~ 20V for electrical needs. Operating supply voltage 10V ~ 20V for the device.