CMF20120D
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | Z-FET™ | |
| IC Encapsulation Type | Tube | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | SiCFET (Silicon Carbide) | |
| Drain-Source Breakdown Volts | 1200 V | |
| Continuous Drain Current at 25C | 42A (Tc) | |
| Gate Drive Voltage Range | 20V | |
| Max On-State Resistance | 110mOhm @ 20A, 20V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Max Gate Charge at Vgs | 90.8 nC @ 20 V | |
| Maximum Gate Voltage | +25V, -5V | |
| Max Input Cap at Vds | 1915 pF @ 800 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 215W (Tc) | |
| Ambient Temp Range | -55°C ~ 135°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-247-3 | |
| Component Housing Style | TO-247-3 |
Description
Supports a continuous drain current (Id) of 42A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 1200 V. Accommodates drive voltage specified at 20V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 90.8 nC @ 20 V gate charge at Vgs for enhanced switching efficiency. Upholds 90.8 nC @ 20 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1915 pF @ 800 V at Vds for safeguarding the device. The input capacitance is rated at 1915 pF @ 800 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 135°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Enclosure type TO-247-3 ensuring device integrity. Highest power dissipation 215W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 90.8 nC @ 20 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 110mOhm @ 20A, 20V for MOSFET criteria. Product or component classification series Z-FET™. Manufacturer package type TO-247-3 for component choice. Platform technology SiCFET (Silicon Carbide) for the type of product. Peak Vgs +25V, -5V for MOSFET parameters. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
