Stock: 32000
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 32000 | ₹ 2.44 | ₹ 78,080.00 |
| 24000 | ₹ 2.59 | ₹ 62,160.00 |
| 16000 | ₹ 2.78 | ₹ 44,480.00 |
| 4000 | ₹ 3.04 | ₹ 12,160.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 60 V | |
| Continuous Drain Current at 25C | 115mA (Ta) | |
| Gate Drive Voltage Range | 4.5V, 10V | |
| Max On-State Resistance | 3Ohm @ 500mA, 10V | |
| Max Threshold Gate Voltage | 2.5V @ 250µA | |
| Max Gate Charge at Vgs | 0.8 nC @ 4.5 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 35 pF @ 25 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 200mW (Ta) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | SOT-523 Flat Leads | |
| Component Housing Style | SC-89, SOT-490 |
Description
Supports a continuous drain current (Id) of 115mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 60 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 0.8 nC @ 4.5 V gate charge at Vgs for enhanced switching efficiency. Upholds 0.8 nC @ 4.5 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 35 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 35 pF @ 25 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case SC-89, SOT-490 providing mechanical and thermal shielding. Enclosure type SOT-523 Flat Leads ensuring device integrity. Highest power dissipation 200mW (Ta) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 0.8 nC @ 4.5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 3Ohm @ 500mA, 10V for MOSFET criteria. Manufacturer package type SOT-523 Flat Leads for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold level.
