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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Active | |
| Semiconductor Diode Category | Single Phase | |
| Core Technology Platform | Silicon Carbide Schottky | |
| Max Peak Reverse Volts | 600 V | |
| Average DC Output Current | 40 A | |
| Max Forward Voltage Drop | 1.8 V @ 40 A | |
| Reverse Leak at Voltage | 800 µA @ 600 V | |
| Ambient Temp Range | -40°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | SP1 | |
| Vendor Package Type | SP1 |
Description
Delivers average rectified current (Io) recorded at 40 A. Presents reverse leakage current quantified at 800 µA @ 600 V at Vr. Includes diode type indicated as Single Phase. Mounting style Chassis Mount for structural integrity. Operating temperature -40°C ~ 175°C (TJ) for thermal stability. Enclosure Bulk for component protection or transport. Enclosure/case SP1 providing mechanical and thermal shielding. Enclosure type SP1 ensuring device integrity. Product condition Active for availability and lifecycle. Manufacturer package type SP1 for component choice. Platform technology Silicon Carbide Schottky for the type of product. Highest forward voltage Vf at If 1.8 V @ 40 A for diodes. Maximum reverse voltage peak 600 V for safeguarding.
